Littelfuse (NASDAQ:LFUS) will be issuing its quarterly earnings data before the market opens on Wednesday, October 30th. Analysts expect the company to announce earnings of $1.57 per share for the quarter. Littelfuse has set its Q3 2019 guidance at $1.50-1.64 EPS and its Q3 guidance at $1.50-$1.64 EPS.Parties interested in registering for the company’s conference call can do so using this link.
Littelfuse (NASDAQ:LFUS) last released its quarterly earnings data on Wednesday, July 31st. The technology company reported $1.91 earnings per share for the quarter, meeting analysts’ consensus estimates of $1.91. The firm had revenue of $397.00 million during the quarter, compared to analyst estimates of $397.98 million. Littelfuse had a return on equity of 13.82% and a net margin of 10.15%. The business’s quarterly revenue was down 13.5% compared to the same quarter last year. During the same quarter in the prior year, the firm posted $2.68 earnings per share. On average, analysts expect Littelfuse to post $7 EPS for the current fiscal year and $8 EPS for the next fiscal year.
NASDAQ:LFUS opened at $188.63 on Wednesday. The firm has a market cap of $4.61 billion, a PE ratio of 19.98, a price-to-earnings-growth ratio of 2.52 and a beta of 1.08. Littelfuse has a fifty-two week low of $149.80 and a fifty-two week high of $206.00. The company has a debt-to-equity ratio of 0.46, a quick ratio of 2.95 and a current ratio of 3.90. The business has a 50 day moving average price of $176.74 and a 200-day moving average price of $175.46.
Littelfuse, Inc designs, manufactures, and sells circuit protection, power control, and sensing products worldwide. The company's Electronics segment offers fuses and fuse accessories, positive temperature coefficient resettable fuses, polymer electrostatic discharge suppressors, varistors, magnetic sensing products, and gas discharge tubes; and discrete transient voltage suppressor (TVS) diodes, TVS diode arrays, protection and switching thyristors, silicon carbide, metal-oxide-semiconductor field-effect transistors, and silicon carbide diodes, as well as insulated gate bipolar transistors.
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